Semiconductor equipment makers Axcelis Technologies, Inc. ACLS
and Lam Research Corp., LRCX today announced a strategic
collaboration agreement focusing on the interrelationship between ion
implantation, etch processes, and photoresist strip applications, including
material modification implants and high-dose implant strip (HDIS). Separately,
Axcelis decided that it will exit the dry-strip business and divest its
dry-strip intellectual property and technology, including the advanced
non-oxidizing process technology of its Integra product line, to Lam Research,
allowing Axcelis to focus exclusively on the ion implant market. Axcelis will
continue to ship its 300 mm dry-strip products through August 2013, and
support the large Axcelis installed base indefinitely, including all existing
parts and service contracts.
For Lam, in addition to acquiring all of Axcelis' dry-strip IP, the
collaboration agreement provides for cooperation with Axcelis in the area of
advanced implant technology focused on further strengthening its
industry-leading etch, dry-strip, clean, and deposition offerings.
Contamination from improperly prepared surfaces, particularly after high-dose
implants, can affect the deposition and adhesion of subsequent layers,
impacting device yield. Advanced semiconductor nodes can use material
modification implant techniques in conjunction with advanced etch processes to
achieve improved device performance.
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