Transphorm
Transphorm (OTCQB: TGAN) designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices.
The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan.
COO & Co-Founder
Transphorm, Inc.
Primit co-leads overall strategy at Transphorm. He is also responsible for P&L, key customer relationships and products, engineering and manufacturing. Primit has over 10 years experience in business area leadership and over 15 years in GaN / semiconductor development, technical marketing and intellectual property. Prior to Transphorm, Primit led GaN electronics at Nitres Inc. through its acquisition by Cree, where he served as head of Advanced Technology at Cree SBTC in charge of GaN development and government business.
Primit received his B.Tech. in EE from IIT, Mumbai and his Ph.D. in ECE from UCSB. He has more than 30 patents awarded/pending in the area of GaN materials, devices and circuits, and has co-authored more than 70 publications and presentations.