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VisIC Technologies - 9 kW GaN Half Bridge Without Paralleling


VisIC Technologies - 9 kW GaN Half Bridge Without Paralleling

PR Newswire

NES ZIONA, Israel, July 31, 2018 /PRNewswire/ -- VisIC Technologies, an innovator of efficient power electronics based on Gallium Nitride (GaN) semiconductors, has announced a new water cooled V22N65A-HBEVB half bridge evaluation board to demonstrate the high-power performance achievable using its GaN All-Switches™ (Advanced Low Loss Switches).

VisIC Technologies

This evaluation platform can be operated in any half bridge topology and was tested in Buck and Boost topologies up to 9kW, using only single V22N65A transistors. This is the first GaN based solution on the market that can deliver up to 9kW of power, without the need for paralleling, making it ideal for high-density On-Board-Chargers (OBC) in hybrid and electric vehicles.

The V22N65A All-Switch™ SMD discrete top cooled devices feature ultra-low conduction and switching losses coupled with an advanced isolated package design, allowing maximum performance and power out of each GaN device.

A low parasitic inductance power and gate loop design, combined with a high threshold voltage (5V) allows designers to safely employ VisIC GaN switches in high power applications in multi-kW range.

The V22N65A-HBEVB evaluation platform consists of:

  • Half Bridge power stage using 22mOhm GaN All-Switches;
  • Isolated half bridge driver from Silicon Labs (Si82394);
  • Two isolated auxiliary power supplies from Murata (NXE251212MC);
  • Dead Time control from 75ns to 200ns;
  • High current (85A) connectors from Wurth Electronics (74655095R)

The All-In-One water cooled V22N65A-HBEVB is available at a cost of $600. An air-cooled version is available at a cost of $500.  

For more information, please contact VisIC at

About VisIC Technologies:

Based in Nes Ziona, Israel, VisIC Technologies, Ltd. was established in 2010 by experts in Gallium Nitride (GaN) technology to develop and sell advanced GaN-based power conversion products. VisIC has successfully developed, and is bringing to market, high power GaN-based transistors and modules. (GaN is expected to replace most of the Silicon-based (Si) products currently used in power conversion systems.) VisIC has been granted keystone patents for GaN technology and has additional patents pending. For more information, please visit:

A wise step in design, a GiANt leap in efficiency

Golda Meir
Nes Ziona


V22N65A Efficiency and Junction Temperature in function of Power

V22N65A-HBEVB - 22mOhm GaN Transistors in a Half-Bridge Evaluation Board (Air cooled version)

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SOURCE VisIC Technologies

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