Market Overview

Western Digital Begins Sampling 1.33 Terabit, Four-bits-per-cell, 96-layer 3D NAND


World's Highest Density Monolithic 3D NAND Chip Affirms Continuing
Technology Leadership

Western Digital Corp. (NASDAQ:WDC) today announced successful
development of its second-generation, four-bits-per-cell architecture
for 3D NAND. Implemented for the company's 96-layer BiCS4 device, the
QLC technology delivers the industry's highest 3D NAND storage capacity
of 1.33 terabits (Tb) in a single chip. BiCS4 was developed at the joint
venture flash manufacturing facility in Yokkaichi, Japan with our
partner Toshiba Memory Corporation. It is sampling now and volume
shipments are expected to commence this calendar year beginning with
consumer products marketed under the SanDisk brand. The company expects
to deploy BiCS4 in a wide variety of applications from retail to
enterprise SSDs.

This press release features multimedia. View the full release here:

Western Digital 3D NAND (Photo: Business Wire)

Western Digital 3D NAND (Photo: Business Wire)

"Leveraging Western Digital's silicon processing, device engineering and
system integration capabilities, the QLC technology allows 16 distinct
levels to be sensed and utilized for storing data," said Dr. Siva
Sivaram, executive vice president, Silicon Technology and Manufacturing
at Western Digital. "BiCS4 QLC is our second generation
four-bits-per-cell device, and it builds on the learnings from our QLC
implementation in 64-layer BiCS3. With the best intrinsic cost structure
of any NAND product, BiCS4 underscores our strengths in developing flash
innovations that allow our customers' data to thrive across retail,
mobile, embedded, client and enterprise environments. We expect the
four-bits-per-cell technology will find mainstream use in all these

About Western Digital

Western Digital creates environments for data to thrive. The company is
driving the innovation needed to help customers capture, preserve,
access and transform an ever-increasing diversity of data. Everywhere
data lives, from advanced data centers to mobile sensors to personal
devices, our industry-leading solutions deliver the possibilities of
data. Western Digital® data-centric solutions are marketed under the
G-Technology™, HGST, SanDisk®, Tegile™, Upthere™, and WD® brands.

Financial and investor information is available on the company's
Investor Relations website at

Western Digital, the Western Digital logo, and SanDisk, are registered
trademarks or trademarks of Western Digital Corporation or its
affiliates in the U.S. and/or other countries. All other marks are the
property of their respective owners. © 2018 Western Digital Corporation
or its affiliates. All rights reserved.

Forward-Looking Statements

This news release contains certain forward-looking statements, including
statements concerning the expected availability, benefits, features,
pricing and performance of Western Digital's 1.33 terabit,
four-bits-per-cell, 96-layer 3D NAND device. There are a number of risks
and uncertainties that may cause these forward-looking statements to be
inaccurate including, among others: volatility in global economic
conditions; business conditions and growth in the storage ecosystem;
impact of competitive products and pricing; market acceptance and cost
of commodity materials and specialized product components; actions by
competitors; unexpected advances in competing technologies; our
development and introduction of products based on new technologies and
expansion into new data storage markets; risks associated with
acquisitions, mergers and joint ventures; difficulties or delays in
manufacturing; and other risks and uncertainties listed in the company's
filings with the Securities and Exchange Commission (the "SEC"),
including the company's Form 10-Q filed with the SEC on May 8, 2018, to
which your attention is directed. You should not place undue reliance on
these forward-looking statements, which speak only as of the date
hereof, and the company undertakes no obligation to update these
forward-looking statements to reflect subsequent events or circumstances.

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