Samsung Produces New High-performance Enterprise SSDs for Data Centers
Samsung Electronics Co., Ltd, a global leader in advanced semiconductor technology solutions, today announced that it is producing advanced solid state drives (SSDs) that are designed specifically for use in servers and enterprise storage systems. These drives – the SM843 and the SM1625 – will be particularly useful as high-speed storage for a wide range of server and storage applications that depend on extremely fast data writing including social media in the cloud, SQL database logs, media streaming, virtualization, video on demand and online transaction processing (OLTP).
“Samsung's new data center and enterprise SSDs deliver extremely high performance with low power consumption in providing the most efficient storage solutions for data center applications,” said Myungho Kim, vice president of memory marketing, Device Solutions, Samsung Electronics. “Samsung will aggressively produce its new line-up of SSDs beginning this month to accelerate SSDs' move into not only the server but also the storage marketplace, as we continue to affirm our leadership in the SSD market.”
Targeted toward data centers, Samsung's SM843 drive is a multi-level chip (MLC) SSD offering two-three times the endurance of similar MLC-based drives. The SATA interface drive can write up to 1064TBW (terabytes written), which represents a more than 1600 percent improvement from Samsung's previous generation SSD, which offered 60TBW.
The SM843 drive delivers best-in-class sustained random write performance, up to 11,000 IOPS (inputs outputs per second), with up to 70,000 (sustained) random read IOPS. In addition, its maximum latency, or the time it takes to send data from an application to the drive, has been reduced more than 80 percent from Samsung's previous enterprise SSD.
Further, the SM843 can read data sequentially at up to 520 megabytes per second (MB/s), and write it at up to 420MB/s. It is being sampled in densities of 120 gigabytes (GB), 240GB and 480GB. A true energy saver, the SM843 consumes 28 percent less active power than Samsung's previous enterprise SSD. In addition, it comes with an option for protection against loss of power in outages.
Samsung also began introducing another new enterprise-targeted SSD – the SM1625 – this month, its first dual-ported SAS SSD. The SM1625 is available in densities of 100GB, 200GB, 400GB and 800GB.
Designed for use in external storage systems for high availability (HA) environments, the SM1625 features up to 41,000 (sustained) random write IOPS, and randomly reads up to 101,000 IOPS when using both ports. The Samsung's SM1625 writes data sequentially at 740MB/s and reads it at 848MB/s when using both ports. It also will provide power loss protection to ensure data is safe in a power outage.
Both drives make use of Samsung's advanced 20 nanometer class* NAND flash memory components which incorporate an ultra-fast toggle DDR interface.
For more information about Samsung SSDs, visit http://www.samsung.com/global/business/semiconductor/product/flash-ssd/overview
About Samsung Electronics Co., Ltd.
Samsung Electronics Co., Ltd. is a global leader in semiconductor, telecommunication, digital media and digital convergence technologies with 2011 consolidated sales of US$143.1 billion. Employing approximately 206,000 people in 197 offices across 72 countries, the company operates two separate organizations to coordinate its nine independent business units: Digital Media & Communications, comprising Visual Display, Mobile Communications, Telecommunication Systems, Digital Appliances, IT Solutions, and Digital Imaging; and Device Solutions, consisting of Memory, System LSI and LED. Recognized for its industry-leading performance across a range of economic, environmental and social criteria, Samsung Electronics was named the world's most sustainable technology company in the 2011 Dow Jones Sustainability Index. For more information, please visit www.samsung.com.
* Editors' Note: 20nm-class means a process technology node somewhere between 20 and 29 nanometers.
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