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Nanoelectronics research centre imec of Belgium and Veeco Instruments
Inc.
VECO are collaborating on a project aimed at lowering the
cost of producing gallium nitride on silicon (GaN-on-Si) -based power
devices and LEDs.
Barun Dutta, imec's Chief Scientist, commented, “The productivity,
repeatability, uniformity and crystal quality of Veeco's metal organic
chemical vapor deposition (MOCVD) equipment has been instrumental in
helping us meet our development milestones on GaN-on-Si for power and
LED applications. The device performance enabled by the epi has helped
us realize state-of-the-art D-mode (depletion mode) and E-mode
(enhancement mode) power devices. Our goal is to establish an entire
manufacturing infrastructure that allows GaN-on-Si to be a competitive
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