Axcelis, Lam Research Announce Strategic Collaboration Agreement on Ion Impact, Dry-Strip, and Etch

Semiconductor equipment makers Axcelis Technologies, Inc.

and Lam Research Corp.,

today announced a strategic collaboration agreement focusing on the interrelationship between ion implantation, etch processes, and photoresist strip applications, including material modification implants and high-dose implant strip (HDIS). Separately, Axcelis decided that it will exit the dry-strip business and divest its dry-strip intellectual property and technology, including the advanced non-oxidizing process technology of its Integra product line, to Lam Research, allowing Axcelis to focus exclusively on the ion implant market. Axcelis will continue to ship its 300 mm dry-strip products through August 2013, and support the large Axcelis installed base indefinitely, including all existing parts and service contracts. For Lam, in addition to acquiring all of Axcelis' dry-strip IP, the collaboration agreement provides for cooperation with Axcelis in the area of advanced implant technology focused on further strengthening its industry-leading etch, dry-strip, clean, and deposition offerings. Contamination from improperly prepared surfaces, particularly after high-dose implants, can affect the deposition and adhesion of subsequent layers, impacting device yield. Advanced semiconductor nodes can use material modification implant techniques in conjunction with advanced etch processes to achieve improved device performance.